MDD310-14N1 phase leg standard rectifier module 2 1 3 part number MDD310-14N1 backside: isolated fav f v v 1 rrm 300 1400 = v = v i = a 2x features / advantages: applications: package: package with dcb ceramic improved temperature and power cycling planar passivated chips very low forward voltage drop very low leakage current diode for main rectification for single and three phase bridge configurations supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors y2 industry standard outline rohs compliant height: 30 mm base plate: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3600 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact your local sales offi ce. should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms conditions of usage: ixys reserves the right to change limits, condition s and dimensions. 20170116c data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDD310-14N1 v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i r v i a v f 1.13 r 0.13 k/w r min. 300 v rsm v 1 t = 25c vj t = c vj ma 20 v = v r t = 25c vj i = a f v t = c c 100 p tot 960 w t = 25c c r k/w 0.04 300 1400 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.33 t = 25c vj 150 v f0 v 0.75 t = c vj 150 r f 0.63 m ? v 1.00 t = c vj i = a f v 300 1.29 i = a f 600 i = a f 600 threshold voltage slope resistance for power loss calculation only ma 125 v rrm v 1400 max. repetitive reverse blocking voltage t = 25c vj i a 480 c j 381 junction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 150 11.5 12.4 477.8 463.5 ka ka ka ka 9.78 10.6 661.3 641.7 1400 rms forward current f(rms) fav 180 sine average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1500 ixys reserves the right to change limits, condition s and dimensions. 20170116c data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDD310-14N1 ratings part number yywwaa date code (dc) + production index (pi) lot.no: xxxxxx data matrix: part no. (1-19), dc + pi (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) circuit package t op c m d nm 5 mounting torque 2.5 t vj c 150 virtual junction temperature -40 weight g 254 symbol definition typ. max. min. conditions operation temperature unit m t nm 15 terminal torque 12 v v t = 1 second v t = 1 minute isolation voltage mm mm 13.0 13.0 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 600 a per terminal 125 -40 terminal to terminal y2 delivery mode quantity code no. ordering number marking on product ordering 50/60 hz, rms; i 1 ma isol MDD310-14N1 429163 box 2 MDD310-14N1 standard 3600 isol t stg c 125 storage temperature -40 3000 threshold voltage v 0.75 m ? v 0 max r 0 max slope resistance * 0.34 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 150 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20170116c data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDD310-14N1 116 80 max. 12.4 6 5.5 60 38 1 2 3 4 5 6 7 28.5 35 42.5 3x m8 65 x 57 32 4.5 0.25 13 1 2 1 3 outlines y2 ixys reserves the right to change limits, condition s and dimensions. 20170116c data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDD310-14N1 0 25 50 75 100 125 150 0 100 200 300 400 0 100 200 300 400 500 01 1 10 5 10 6 0.001 0.01 0.1 1 0 2000 4000 6000 8000 10000 12000 1 4 0 0 0 t [s] 0 25 50 75 100 125 150 0 100 200 300 400 500 i fsm [a] 80 % v rrm t vj = 45c t vj = 150c 50 hz t vj = 150c v r = 0 v t vj = 45c 180 sin 120 60 30 dc t [ms] i 2 t [a 2 s] t c [c] i favm [a] i favm t ]a[ a [c] p tot [w] fig. 1 surge overload current i fsm : crest value, t: duration fig. 2 i 2 t versus time (1-10 ms) fig. 3 maximum forward current at case temperature fig. 4 power dissipation versus forward current and ambient temperature (per diode) 180 sin 120 60 30 dc 1.0 1.4 0.4 0.5 0.6 0.8 0.3 r thka k/w 1.8 0 25 50 75 100 125 150 0 200 400 600 0 400 800 1200 1600 r l p tot [w] i davm [a] t a [c] fig. 5 single phase rectifier bridge: power dissipation vs. direct output current and ambient temperature r = resistive load, l = inductive load 2x mdd310 circuit b2 0.15 0.08 0.06 r thka k/w 0.40 0.10 0.20 0.30 0.50 rectifier ixys reserves the right to change limits, condition s and dimensions. 20170116c data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDD310-14N1 10 -3 10 -2 10 -1 10 0 10 1 0.00 0.04 0.08 0.12 0.16 0.20 10 -3 10 -2 10 -1 10 0 10 1 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 fig.6 three phase rectifier bridge: power dissipation vers us direct output current and ambient temperature t [s] t [s] z thjk [ k/w] fig. 7 transient thermal impedance junction to case (per d iode) f ig . 8 t r an s i en t t he r m al i m pedan c e j un c t ion t o he a t s i n k ( pe r d i ode ) constants for z thjc calculation: i r thi [k/w] t i [s] 1 0.0035 0.0099 2 0.0165 0.1680 3 0.1091 0.4560 constants for z thjk calculation: i r thi (k/w) t i (s) 1 0.0035 0.0099 2 0.0165 0.1680 3 0.1091 0.4560 4 0.0400 1.3600 0 25 50 75 100 125 150 0 200 400 600 800 0 500 1000 1500 2000 2500 p tot [w] i davm t ]a[ a [c] 3x mdd310 circuit b6 0.08 0.05 0.03 r thka k/w 0.2 0.06 0.12 0.15 0.3 dc 30 dc 30 z thjc [k/w] r thjc [k/w] 0.129 0.131 0.132 0.132 0.133 d dc 180 120 60 30 r thjc for various conduction angles d : r thjk [k/w] 0.169 0.171 0.172 0.172 0.173 d dc 180 120 60 30 r thjk for various conduction angles d : rectifier ixys reserves the right to change limits, condition s and dimensions. 20170116c data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
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